Skip to main content
Home Forums Re: Ram for Plus or SE — #10 Re: Ram for Plus or SE — #10
Post #10 by trag
Source ForumRe: Ram for Plus or SE — #10
Category68k
Post DateTue, 11 Nov 2014 - 19:13
Original URLhttps://68kmla.org/bb/threads/re-ram-for-plus-or-se.581/
Post
If there are are indeed 2/3 chip SIMMs that work they probably do so because the ICs used on those particular SIMMs incorporates a 512 cycle refresh for backwards compatibility.
Ah, thank you.  That's a great technical note.   I had a vague memory of having read about refresh issues, but I (wrongly) thought that it only applied to the II/IIx PAL SIMM subject.

Still, the 2-chip SIMM limitation is not so bad.  It only applies to the Plus and earlier, the SE, Classic and the II and IIx..  I guess pre-Plus don't have SIMM sockets, but the upgrades might have similar issues.

So, if you have 1M of addresses on  a memory chip, and it uses 512 refresh, that implies 9 row address bits?  Refresh is by rows, yes?   So the early machines expect their 1M RAM to be organized as 9 X 11 (row address bits X column address bits)?

Hmmm.  Seems the above is wrong, but I haven't puzzled it out yet.   I'm looking at a datasheet for the Hitachi HM511000 which has ten address pins and uses 512 refresh cycles.   It specifies A0 - A8 as refresh address input.

I can only guess that the multiplexed address rows for data don't correspond to the refresh rows, in some manner.  I thought that they always did.   To get 1M addresses, this RAM must be using 10 X 10 addressing, because there are only 10 address pins available.  Can't use 9 X 11 when there's no number 11 (or A10).   10 X 10 addressing implies 1024 rows and 1024 columns.  Yet only 512 rows are used for refresh.   Perhaps it refreshes two rows at a time?   I'm going to post this while I continue looking.  Feel free to jump in.  :)

I'm also ignorant of how CAS_ Before RAS_ Refresh works.   That doesn't appear to require a Row Address at all according to the timing diagrams.    Does that refresh the whole chip (all the rows) and so make the memory unavailable for a long block of time, with a corresponding long block of availability until the next block refresh?  Or is there an internal address counter which assigns a row address on a CAS_ Before RAS_? 

hm511000.pdf

MSM514400D.pdf

mp.ls